Defence NSN Source is a one-stop shop for Transistor components and other similar products that meet the needs of our customer base. You have taken a specific interest in part number BF994S, a Nxp Semiconductors Usa Inc offering we carry that is listed alongside the NSN 5961-01-422-6529 to streamline identification and procurement. If you fill out and submit the Request for Quote (RFQ) form located below, you can secure pricing options for your comparisons. Within 15 minutes of one of our team members receiving and reviewing your submission, you can anticipate a customized response.
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We strive to make the procurement process more straightforward and efficient by offering comprehensive details for listed components whenever possible. For instance, part number BF994S was manufactured by Nxp Semiconductors Usa Inc under the CAGECode H1R01. Moreover, by using the first digits of the NSN 5961-01-422-6529, we can see that this product belongs to FSC 5961 Semiconductor Devices and Associated Hardware. Utilizing such information, you can ensure that you are securing precisely what you need to carry out operations or meet your project requirements. Keeping this in mind, obtain a quote on part number BF994S with our online services.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-422-6529 Item PartTypeName: TRANSISTOR | 5961 | 014226529 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 647468-1 | 5 | 9 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| ABMK | OVERALL WIDTH | 0.103 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.119 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABKW | OVERALL HEIGHT | 0.061 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL INSULATED GATE TYPE |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
| TEST | TEST DATA DOCUMENT | 37695-647468 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
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