Defence NSN Source is a one-stop shop for Microcircuit Memory components and other similar products that meet the needs of our customer base. You have taken a specific interest in part number IDT7204L80DB, a Integrated Device Technology Inc offering we carry that is listed alongside the NSN 5962-01-422-0377 to streamline identification and procurement. If you fill out and submit the Request for Quote (RFQ) form located below, you can secure pricing options for your comparisons. Within 15 minutes of one of our team members receiving and reviewing your submission, you can anticipate a customized response.
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We strive to make the procurement process more straightforward and efficient by offering comprehensive details for listed components whenever possible. For instance, part number IDT7204L80DB was manufactured by Integrated Device Technology Inc under the CAGECode 61772. Moreover, by using the first digits of the NSN 5962-01-422-0377, we can see that this product belongs to FSC 5962 Microcircuits Electronic. Utilizing such information, you can ensure that you are securing precisely what you need to carry out operations or meet your project requirements. Keeping this in mind, obtain a quote on part number IDT7204L80DB with our online services.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-422-0377 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014220377 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8956802XX | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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