Defence NSN Source is a one-stop shop for Semiconductordeviceset components and other similar products that meet the needs of our customer base. You have taken a specific interest in part number A2X210M, a Fei Microwave Inc offering we carry that is listed alongside the NSN 5961-01-219-4517 to streamline identification and procurement. If you fill out and submit the Request for Quote (RFQ) form located below, you can secure pricing options for your comparisons. Within 15 minutes of one of our team members receiving and reviewing your submission, you can anticipate a customized response.
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We strive to make the procurement process more straightforward and efficient by offering comprehensive details for listed components whenever possible. For instance, part number A2X210M was manufactured by Fei Microwave Inc under the CAGECode 21847. Moreover, by using the first digits of the NSN 5961-01-219-4517, we can see that this product belongs to FSC 5961 Semiconductor Devices and Associated Hardware. Utilizing such information, you can ensure that you are securing precisely what you need to carry out operations or meet your project requirements. Keeping this in mind, obtain a quote on part number A2X210M with our online services.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-219-4517 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 012194517 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | G | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 775085-1 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 110.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| PMLC | PRECIOUS MATERIAL AND LOCATION | CONTACT SURFACES PLATED GOLD |
| TEST | TEST DATA DOCUMENT | 96214-775085 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE |
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