| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-360-1357 (013601357) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Integrated Device Technology Inc |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | MILSTAR |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZER | MEMORY DEVICE TYPE | RAM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RANDOM ACCESS MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM ACCESS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | F-9 MIL-M-38510 |
| FEAT | SPECIAL FEATURES | RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| Relevant Components for NSN - 5962-01-360-1357, 5962013601357 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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