| MRC | Criteria | Characteristic |
|---|
| ABHP | OVERALL LENGTH | 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.2 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | SURFACE MOUNT PNP SILICON TRANSISTOR |
| FEAT | SPECIAL FEATURES | SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS |
