Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-068-0687 (000680687) |
NCB Code | USA (00) |
Manufacturer | Morris Material Handling Inc, Northrop Grumman Systems Corporation, Raytheon Company, Military Specifications, Litton Systems Inc, Freescale Semiconductor Inc, General Electric Company, Joint Army-Navy Specifications, Thales Defense And Security Inc, Hewlett-Packard Company, Miltope Corporation, Kollsman Inc, Fairchild Semiconductor Corp, Rockwell Collins Aerospace, Itt Telecom Products Corp, Raytheon E Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, Philips Electronics North American, United States Department Of The Army, Edo Corp |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N3828A | morris material handling inc | semiconductor device diode | 27315 | RFQ |
1080H82H14 | northrop grumman systems corporation | semiconductor device diode | 04804 | RFQ |
4178600-277 | raytheon company | semiconductor device diode | 05869 | RFQ |
1N3828A | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
947220-1053 | litton systems inc | semiconductor device diode | 13973 | RFQ |
JAN1N3828A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N1766A | general electric company | semiconductor device diode | 09214 | RFQ |
19A115528P1 | general electric company | semiconductor device diode | 08771 | RFQ |
JAN1N3828A | military specifications | semiconductor device diode | 81349 | RFQ |
IN3828A | military specifications | semiconductor device diode | 81349 | RFQ |
1N3828A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
848142-0620 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
16A21 | hewlett-packard company | semiconductor device diode | 52983 | RFQ |
1N3828B | military specifications | semiconductor device diode | 81349 | RFQ |
M57-84 | miltope corporation | semiconductor device diode | 54418 | RFQ |
1N1485 | military specifications | semiconductor device diode | 81349 | RFQ |
68415016108 | kollsman inc | semiconductor device diode | 89944 | RFQ |
1N3828A | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
353-9010-050 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
539564 | itt telecom products corp | semiconductor device diode | 21340 | RFQ |
303-0157 | raytheon e systems inc | semiconductor device diode | 33875 | RFQ |
5961PL0190095 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
JAN1N3828A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
16A21 | philips electronics north american | semiconductor device diode | 0zbj4 | RFQ |
Z496 | united states department of the army | semiconductor device diode | 12255 | RFQ |
JAN1N3828A | edo corp | semiconductor device diode | 00752 | RFQ |
MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N3828 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N3828A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.371 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 41.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 146.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-068-0687, 5961000680687 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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